Preparation of conducting and transparent thin films of tin-doped indium oxide by magnetron sputtering

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High-quality 800-Å-thick films of tin-doped indium oxide have been prepared by magnetron sputtering. It is shown that films with low resistivity (∼4×10−4 Ω cm) and high optical transmission (≳85% between 4000 and 8000 Å) can be prepared on low-temperature (40–180 °C) substrates with O2 partial pressures of (2–7)×10−5 Torr.