The epitaxial growth of very thin GaSe films on H-Si(111), 7×7-Si(111), and √3×√3 Ga-Si(111) has been investigated using the x-ray standing-wave technique. The interface structure was found to be identical whatever the Si(111) surface preparation used and consists of a GaSe half-layer. Ga atoms are covalently bonded with Si top atoms and are located in T sites. Beyond the interface, the growth proceeds layer by layer and not atomic plane by atomic plane. Moreover, the first complete layer above the interface is almost completely relaxed with respect to the Si substrate.
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Koëbel et al. (1997) studied this question.
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