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A detailed analysis is presented of magnetoplasma reflection in semiconductors. Theoretical curves are given to show the effect of the effective mass m * , the relaxion time τ, and the dielectric constant ϵ on the shape of the plasma edge. A method is given for the simultaneous determination of m * , ϵ, τ and the concentration N on the basis of the experimental variations of reflectivity in the plasma edge region. This is applied to the analysis of result obtained for n‐type HgTe at 296 and 85 °K. An increase of the effective mass and a decrease of the dielectric constant decreasing of temperature are observed.
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Śniadower et al. (1968) studied this question.
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