Experimental study demonstrates quantum confinement in amorphous silicon quantum wells, highlighting thickness-dependent optical tuning for nanodevices.
Amorphous Si/SiO 2 quantum wells have been obtained at room temperature with atomic precision using magnetron sputtering. The Si/SiO 2 layer structure induces the higher optical transmittance at the visible wavelength region with increasing layer numbers. The tentative absorption coefficients are evaluated for integrated Si thicknesses. The absorption edge energy dependency on Si layer thickness E 0 = 1.61 + 0.75d -2 is in accordance with effective mass theory for thicknesses 0.5 < d < 6nm. Quantum confinement effects of the Si/SiO 2 nanostructure layer are confirmed from optical transmittance and reflectance spectra.
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Takeuchi et al. (2013) studied this question.
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