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September 1, 1996Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

High selectivity plasma etching of silicon dioxide with a dual frequency 27/2 MHz capacitive radio frequency discharge

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Authors

WTWen–Yu TsaiNational Taiwan UniversityGMG. MuellerABB (Switzerland)RLRobert G. LindquistUniversity of Alabama in Huntsville

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Cite This Study

Tsai et al. (1996) studied this question.

synapsesocial.com/papers/6a742830f40cdade3da7f5b2https://doi.org/10.1116/1.588820
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