In this study, molecular dynamics models were developed to simulate the single‐grit diamond grinding of single‐crystal silicon and silicon carbide. The effects of grinding depth and grinding speed on the temperature field, grinding force, workpiece surface morphology, and material phase transformation during the process were systematically investigated. In parallel, experimental diamond grinding of single‐crystal silicon and silicon carbide was conducted. The machined surface morphology was examined using SEM, and the elemental composition of the machined surface was characterized by EDS. These analyses reveal the differences in machining characteristics between single‐crystal silicon and silicon carbide during grinding.
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Zhang et al. (2026) studied this question.
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