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Evaluates a thermal network model for junction temperature accuracy in automotive power modules, indicating improved predictions.
To address the challenge of balancing junction temperature prediction accuracy and computational efficiency for high-power multi-chip IGBT modules in automotive applications during complex electro-thermal conversion processes, this study proposes an improved three-dimensional thermal network model based on equivalent power loss injection. Firstly, the effective heat conduction area of each packaging layer under actual heat flow distribution is extracted through three-dimensional finite element simulation, and the single-chip self-heating network parameters are constructed. Secondly, targeting the thermal cross-coupling effect among multiple chips, an elliptical thermal diffusion model is applied to accurately define the thermal coupling region, and a dynamic equivalent power loss compensation mechanism is introduced. Efficient decoupling of multi-heat-source interference is achieved without increasing the state-space dimension of the model. An experimental benchmarking results comparison indicates that the absolute error of junction temperature prediction by this model under steady-state operating conditions is 0.5 °C. Further comparative analysis under the full CLTC-P (China Light-duty Vehicle Test Cycle for Passenger Car) cycle verifies that the improved model not only overcomes the shortcomings of the traditional Foster model, which severely underestimates the transient peak junction temperature and alternating stress amplitude, but also effectively filters out non-physical overshoots caused by short-term ultra-narrow pulses, thus reasonably estimating the device’s maximum junction temperature within the real physical boundary. This method provides efficient theoretical support for accurate dynamic junction temperature predictions and reliability evaluations of electric vehicles under complex operating conditions.
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Liu et al. (2026) studied this question.
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