Generation of high-resolution kagome lattice structures using extreme ultraviolet interference lithography

High-resolution kagome lattice structures with feature sizes down to the sub-50 nm regime are fabricated using diffraction-based extreme ultraviolet interference lithography. The resulting interference pattern of multiple beams is sensitive to the relative phase of the interfering beams. The precise control of their phases is achieved by precise positioning of transmission diffraction gratings on a mask using a high-end electron beam lithography tool. The presented method may find applications in providing high-resolution and large-area kagome lattice structures for studies on frustrated magnetic systems, photonic crystals, and plasmonics.