Demonstration of the p-NiOx/n-Ga₂O₃ Heterojunction Gate FETs and Diodes With BV²/Ron,sp Figures of Merit of 0.39 GW/cm² and 1.38 GW/cm²

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We report on achieving high-performance β-Ga2O3power devices through the incorporation of the p-type NiOx. β-Ga2O3p-n heterojunction (HJ) diodes, as well as the novel p-n HJ gate (G) field-effect-transistors (HJ-FETs), have all demonstrated state-of-the-art Baliga's power figure of merit (P-FOM). The HJ p-n diode is introduced to provide a large built-in potential and alleviate the peak electric field to enhance the BV. The non-field plated p-n HJ diode and HJ-FET acquire a breakdown voltage (BV)/specific on-resistance (Ron,sp) of 1220 V/1.08 mΩ · cm2and 1115 V/3.19 mΩ ·cm2, respectively. Therefore, the P-FOM which is defined as the BV2/Ron,spis yielded to be 1.38 GW/cm2and 0.39 GW/cm2for p-n HJ diode and HJ-FET, respectively. Due to the hard realization of p-type Ga2O3, these findings show significant insights on the development of Ga2O3power devices and offer great promises of implementing p-NiOxin boosting the Ga2O3power device performances.