Anti-level-crossing of Landau and the electric subband levels is observed in the high-mobility two-dimensional electron gas at the GaAs/(GaAl)As interface. Coupling between the electron motion parallel and perpendicular to the interface is due to a small parallel component of magnetic field. This novel subband spectroscopic technique determines the electric subband transition energy in this two-dimensional electron system.
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Schlesinger et al. (1983) studied this question.
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