Low-temperature metalorganic chemical vapor deposition of InP on Si(001)

We report successful growth of antiphase domain-free InP on Si(001) without any preannealing of the Si substrate using low-pressure metalorganic chemical vapor deposition in contrast to present belief that high-temperature substrate annealing prior to growth is imperative to achieve this goal. Optimized crystallographic and optical properties are obtained for an offcut along [11̄0] of 4°±0.4°, an InP buffer layer temperature of 400 °C±10 °C, a layer deposition temperature of 640 °C, and low growth rates r≤2.7 μm/h.