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November 1, 1984Japanese Journal of Applied Physics

Growth of Single Domain GaAs Layer on (100)-Oriented Si Substrate by MOCVD

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MAMasahiro AkiyamaNational Institute of Technology, Nagano CollegeYKYoshihiro KawaradaOki Electric Industry (Japan)KKKatsuzo KaminishiToshiba (Japan)

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Akiyama et al. (1984) studied this question.

synapsesocial.com/papers/6a6f7373439bab0cabc2cc1fhttps://doi.org/10.1143/jjap.23.l843
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