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June 15, 1984Applied Physics Letters

Molecular beam epitaxial growth and material properties of GaAs and AlGaAs on Si (100)

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WWW. I. WangRockwell Automation (United States)

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W. I. Wang (1984) studied this question.

synapsesocial.com/papers/6a6f72d88031ec7bb1dbc13ahttps://doi.org/10.1063/1.94673
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