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June 1, 1978Japanese Journal of Applied Physics

Heteroepitaxial Growth of GaP on Silicon by Molecular Beam Epitaxy

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SGShun‐ichi GondaOsaka Research Institute of Industrial Science and TechnologyYMYuichi MatsushimaWaseda UniversitySMSeiji MukaiJapan Advanced Institute of Science and Technology

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Gonda et al. (1978) studied this question.

synapsesocial.com/papers/6a6f731bf44fa9f079dce3e6https://doi.org/10.1143/jjap.17.1043
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  1. 1Characterization and Substrate-Temperature Dependence of Crystalline State of GaAs Grown by Molecular Beam Epitaxy1975 · 23 citations