What question did this study set out to answer?

To achieve maskless epitaxial lateral overgrowth of gallium nitride layers on grooved silicon substrates in a single uninterrupted growth run.

February 5, 2001Applied Physics Letters

Maskless epitaxial lateral overgrowth of GaN layers on structured Si(111) substrates

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Authors

ASA. StrittmatterOtto-von-Guericke University Magdeburg SRSven RodtTechnische Universität Berlin LRL. ReißmannSENTECH Instruments (Germany)

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Implication

Experimental study demonstrates maskless lateral overgrowth of gallium nitride on grooved silicon substrates, indicating a simpler pathway to high-quality semiconductor films.

Key Points

To achieve maskless epitaxial lateral overgrowth of gallium nitride layers on grooved silicon substrates in a single uninterrupted growth run.
Patterned Si(111) substrates with parallel grooves oriented along or perpendicular to the Si <1-10> direction using photolithography and anisotropic chemical dry etching.
Grew GaN layers via metalorganic chemical vapor deposition in a continuous, mask-free process.
Characterized structural and optical qualities using atomic force microscopy and cathodoluminescence spectroscopy.
GaN nucleated separately at the bottom of the etched grooves and on the tops of underetched ridges, preventing mutual interference during deposition.
GaN growing from the ridge plateaus expanded laterally across adjacent grooves, significantly improving crystalline perfection and optical emission efficiency.

Cite This Study

Strittmatter et al. (2001) studied this question.

synapsesocial.com/papers/6a72937ff44fa9f079e001c3 https://doi.org/10.1063/1.1347013

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Implication

Experimental study demonstrates maskless lateral overgrowth of gallium nitride on grooved silicon substrates, indicating a simpler pathway to high-quality semiconductor films.

Maskless epitaxial lateral overgrowth of GaN layers on structured Si(111) substrates

Discussion

Member takes

Implication

Key Points

Cite This Study

Maskless epitaxial lateral overgrowth of GaN layers on structured Si(111) substrates

Discussion

Member takes

Implication

Key Points

Cite This Study

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