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October 9, 2000Applied Physics Letters

Vertically faceted lateral overgrowth of GaN on SiC with conducting buffer layers using pulsed metalorganic chemical vapor deposition

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RFR. S. Qhalid FareedAnna University, ChennaiJYJun YangGuangxi UniversityJZJianping ZhangChinese Academy of Sciences

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Fareed et al. (2000) studied this question.

synapsesocial.com/papers/6a893eeb4850d3e108c9764fhttps://doi.org/10.1063/1.1316063
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