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May 1, 1980Applied Physics Letters

On the (110) orientation as the preferred orientation for the molecular beam epitaxial growth of GaAs on Ge, GaP on Si, and similar zincblende-on-diamond systems

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HKH. KroemerUniversity of California, Santa BarbaraKPK. J. PolaskoGeneral Electric (United States)SWSteve C. WrightAlderney Hospital

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Kroemer et al. (1980) studied this question.

synapsesocial.com/papers/6a6f2db684cc45bb7bdf97f1https://doi.org/10.1063/1.91643
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