Experimental study demonstrates enhanced gas sensitivity and reduced operating temperatures in silicon-doped tin dioxide sensors, suggesting potential for low-power microelectronic gas detectors.
The paper is devoted to the study of the influence of surface modification by catalysts on the gas sensitivity of a gas sensor. The sample for the study is a gas sensor crystal with dimensions of 1 × 1 mm 2 , manufactured using microelectronic technology. Its design is represented by a film heater, two sensitive elements (SE) based on tin dioxide with the addition of 1 % at. Si (film thickness = 250 nm, the size of the SE area is 200 x 320 μm 2 ) and contacts for the sensitive layer in the form of an interdigital platinum structure with a distance between contacts of 10 μm. It is established that doping increases the gas sensitivity and lowers the operating temperature.
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Perepechina et al. (2020) studied this question.
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