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We report optimized chemical vapor deposition growth procedures that can produce arrays of individual single walled carbon nanotubes (SWNTs) in horizontal configurations with perfect linear shapes to within experimental uncertainties and with levels of alignment >99.9%. This process also enables simultaneous growth of random networks of SWNTs integrated with the arrays in complex layouts. The electrical properties of thin film type transistors formed with SWNTs grown in this fashion approach expectations based on the intrinsic properties of the pristine, individual SWNTs. The procedures described here might represent a strategy to large scale integration of SWNTs into devices for applications in electronics and optoelectronics, sensing, nanomechanical systems, and other areas.
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Kocabaş et al. (2007) studied this question.
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