Data are presented demonstrating room-temperature operation of AlxGa1−xAs-GaAs vertical-cavity surface-emitting lasers grown on Si substrates. The device structures are grown using molecular beam epitaxy and a grown-in quarter-wave AlAs-GaAs stack is used as the n-side reflector and a nonalloyed Ag dot used as the p-side reflector/contact. Pulsed threshold currents of ∼125 mA are obtained for a 15-μm-diam device.
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Deppe et al. (1990) studied this question.
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