In this letter, lasing action of GaAs graded index separate confinement heterostructure single quantum well lasers grown by MOVPE on InP substrates is reported. Stripe lasers without facet coating show a room temperature thresholdcurrent down to 54 mA under pulsed condition. The differential quantum efficiency attains 20% per facet but preliminary aging measurements indicate a short lifetime.
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Ackere et al. (1989) studied this question.
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