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A novel 1200 V fully implanted junction isolation technology for high voltage integrated circuits (HVICs) is proposed. This technique employs the variation in lateral doping (VLD) technique to achieve change in the thickness as well as the concentration of the drift region in a lateral power device to enable effective distribution of the electric field and low on-state resistance. Detailed 2D numerical simulations clearly validate this new approach and show enhancement performance of a lateral MOSFET in comparison to a device with a uniformly doped drift region.
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Hardikar et al. (2000) studied this question.
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