A 200 mm 0.35 /spl mu/m silicon-germanium heterojunction bipolar transistor (SiGe HBT) technology involving epitaxially-aligned polysilicon emitters is described. The devices are shown to combine the high speed performances typical for poly-Si emitter SiGe base devices (f/sub max/ up to 70 GHz) and the low 1/f noise properties of monocrystalline emitter structures (noise figure-of-merit KB as low as 7.2/spl times/10/sup -10/ /spl mu/m/sup 2/). Statistical current gain data are used to demonstrate the manufacturability of this innovative SiGe HBT technology.
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Jouan et al. (1999) studied this question.
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