The densification behavior of pressure sintered cubic silicon carbide containing 1 wt% boron carbide was studied as a function of temperature (1750° to 1950°C). Specimens of theoretical density were obtained at 1950° with a pressure of 3000 psi. Experimental results showed that densification proceeded by a plastic flow mechanism. Interpretation of the data in terms of Murray's equation yields an activation energy of (11S ± 18) kcal/mol. At 1850C and above, tabular grains of 6H and 2H SiC were observed in a matrix of fine grains of 3C SiC.
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Bind et al. (1975) studied this question.
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