Deformation Behavior of Dense Polycrystalline SiC

Dense polycrystalline ( p ‐type) SiC undergoes viscous deformation between 1900° and 2200°C at stresses up to 30,000 psi. A boundary diffusion mechanism is assumed to be rate‐controlling; the product of the boundary diffusion coefficient, D b , and the boundary width, W , calculated from the creep data is image