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The effects of 1 MeV electron irradiation onβ-Ga2O3 Schottky barrier diodes (SBDs) were studied in this work. After an electron irradiation fluence of1× 10\,\,^16cm−2, the forward turn-on voltage ofβ-Ga2O3 SBD decreased from 0.82 to 0.77 V, the reverse current at −100 V decreased by 79%, the height of the Schottky barrier decreased from 1.01 to 0.92 eV, and the ideality factor increased from 1.04 to 1.13, indicating that the electrical characteristics of theβ-Ga2O3 SBD had degraded. ThroughC–Vtesting, a carrier removal rate of 7.9 cm−1 was determined. The deep-level transient spectroscopy (DLTS) results showed that the concentration of native defects at theE C -0.75position increased sharply after irradiation, which may be the main reason for the degradation of theβ-Ga2O3 SBD performance. The research results reveal the impact of high-energy electron irradiation on theβ-Ga2O3 SBD, providing a basis for its application in harsh radiation environments.
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Zhang et al. (2023) studied this question.
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