Ultra-wide bandgap semiconductor Ga2O3 power diodes

Ultra-wide bandgap semiconductor Ga₂O₃ based electronic devices are expected to perform beyond wide bandgap counterparts GaN and SiC. However, the reported power figure-of-merit hardly can exceed, which is far below the projected Ga₂O₃ material limit. Major obstacles are high breakdown voltage requires low doping material and PN junction termination, contradicting with low specific on-resistance and simultaneous achieving of n- and p-type doping, respectively. In this work, we demonstrate that Ga₂O₃ heterojunction PN diodes can overcome above challenges. By implementing the holes injection in the Ga₂O₃, bipolar transport can induce conductivity modulation and low resistance in a low doping Ga₂O₃ material. Therefore, breakdown voltage of 8.32 kV, specific on-resistance of 5.24 mΩ⋅cm², power figure-of-merit of 13.2 GW/cm², and turn-on voltage of 1.8 V are achieved. The power figure-of-merit value surpasses the 1-D unipolar limit of GaN and SiC. Those Ga₂O₃ power diodes demonstrate their great potential for next-generation power electronics applications.