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Pulse response of electroluminescence in poly(3-alkylthiophene) diodes has been investigated. The response consists of two independent parts, that is, fast and slow transition parts. The fast response corresponds to carrier transit between electrodes. On the other hand, the anomalous slow response which becomes marked at higher current is explained by the temperature change of the diode junction. Carrier mobility of the poly(3-alkylthiophene) has been estimated from the fast part, which coincides with that evaluated from the characteristics of poly(3-alkylthiophene) field-effect transistors. Temperature dependence of the electroluminescence intensity in poly(3-alkylthiophene) diode has been discussed.
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Ohmori et al. (1992) studied this question.
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