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The first successful substitutional doping of dilute magnetic semiconductor superlattices composed of alternating layers of CdMnTe and CdTe is reported. These n-type In-doped multilayer structures were prepared using a new thin-film growth technique, photoassisted molecular beam epitaxy, in which the substrate is illuminated with visible light during the deposition process. The electrical, optical, and structural properties of the CdMnTe-CdTe superlattices are discussed.
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Bicknell et al. (1987) studied this question.
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