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We report the first successful substitutional doping of CdTe films with antimony. These p-type epilayers were prepared using a new technique, photoassisted molecular beam epitaxy, in which the substrate is illuminated during the film deposition process. Illumination was found to produce immediate and favorable changes in the electrical properties of the CdTe:Sb films such that highly activated p-type layers resulted. CdTe:Sb films grown under similar conditions, but in the absence of illumination, were found to be insulating.
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Bicknell et al. (1986) studied this question.
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