Semi-insulating InP grown at low temperature by metalorganic chemical vapor deposition

The growth of semi-insulating epitaxial InP layers at low substrate temperature (460 °C) by low-pressure metalorganic chemical vapor deposition has been demonstrated using CCl4 as a dopant source. The resistivity of the material is a function of diluted CCl4 flow rate used during growth. For flow rates less than 5 sccm the material is n type, but for higher flows the resistivity of the material is approximately 5×109 Ω cm. The semi-insulating behavior of the material is maintained after annealing at 600 °C. Transmission electron microscopy does not reveal the presence of phosphorus precipitates in as-grown samples or in samples annealed at 400 and 600 °C. There is significant carbon, hydrogen, and chlorine incorporation in the layers, as measured by secondary ion mass spectrometry. Room-temperature photoluminescence measurements suggest that nonradiative recombination is significant in the material and increases in samples grown with higher CCl4 flows.