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The semiconducting polymer poly(3-hexylthiophene) (P3HT) has been previously used to fabricate Schottky barriers and metal-insulator-semiconductor (MIS) tunnel diodes using indium as the blocking contact. When P3HT is doped with FeCl 3 , the conductivity increases and the polymer behaves as a p-type semiconductor. Schottky junctions fabricated on the doped material exhibited higher rectification ratios than equivalent junctions fabricated on undoped material. An indium contact evaporated on FeCl 3 -doped P3HT film gave the current-voltage ( I-V ) characteristics of a minority carrier tunnel diode. Similar I-V characteristics were observed when a thin insulating polymer film was placed between the indium contact and the doped P3HT film.
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Kuo et al. (1994) studied this question.
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