Single crystal diamond M–i–P diodes for power electronics

Its outstanding electronic properties and the recent advances in growing single-crystal chemically vapour-deposited substrates have made diamond a candidate for high-power applications. Diamond Schottky diodes have the potential of being an alternative to silicon p–i–n and SiC Schottky diodes in power electronic circuits. Extensive experimental and theoretical results, for both on- and off-state behaviour of metal–insulator–p-type diamond Schottky structures, are presented here. The temperature dependence of the forward characteristics and electrical performance of a termination structure suitable for unipolar diamond devices are also presented.