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High-power 1060-nm InGaAs-(Al)GaAs quantum-dot (QD) laser material was developed with an integrated InGaAs quantum film acting as a tunnel injector for electrons. In comparison to a QD laser without tunnel-injection design, the new type of lasers exhibit a strongly improved temperature stability of the threshold current and internal quantum efficiency.
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Pavelescu et al. (2009) studied this question.
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