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Strained layer single quantum well InGaAs lasers with a record low threshold current of 1 mA for as-cleaved facets and 0.25 mA with high reflectivity coated facets have been demonstrated. In addition, these lasers display a weak dependence of threshold current, quantum efficiency, and lasing wavelength on cavity length in comparison with those single quantum well lasers previously reported.
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Chen et al. (1993) studied this question.
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