Low-Threshold Patterned quantum well lasers grown by molecular beam epitaxy

GaAs/AlGaAs patterned quantum well lasers were grown by molecular beam epitaxy on grooved substrates. The carrier confinement and the real-index waveguiding in these lasers rely on lateral thickness variations in the quantum well active layer. Very low threshold currents, as low as l.8mA for uncoated devices at room temperature, with 63% differential efficiency have been obtained.