Low-threshold lasing from high-density InAs quantumdots of uniform size

To construct the active region of a Fabry-Perot laser, high-density InAs quantum dots having a narrow photoluminescence linewidth of ~30 meV have been formed. A very low threshold current density of 76 A/cm2 was achieved at room temperature due to the high gain with narrow linewidth at the ground state of the quantum dots.