Chemical beam epitaxial growth of high-purity GaAs using triethylgallium and arsine

The growth of high-purity GaAs by chemical beam epitaxy using triethylgallium and arsine is reported. Purity of the epilayer is affected by the cracking efficiency of arsine, V/III ratio, and the substrate temperature. Samples generally show p-type conductivity with carbon as the residual impurity. The growth conditions to achieve net carrier concentration below 1014 cm−3 are identified. The low-temperature photoluminescence spectrum shows well-resolved excitonic structures, an indication of excellent optical quality.