Molecular Beam Epitaxial Growth of GaAs Using Triethylgallium and Arsine

Undoped GaAs layers were grown by molecular beam epitaxy (MBE) using triethylgallium (TEG) and arsine (AsH 3 ). The electrical properties of grown layers depended on the cracking temperature T c of AsH 3 as well as the AsH 3 / TEG ratio. At T c =750°C, all layers were p-type; the lowest hole concentration was 1.2×10 15 cm -3 , with a room-temperature mobility of 400 cm 2 /V·s. At T c =850°C, p-n conversion occurred as the AsH 3 /TEG ratio was increased, probably due to compensation between carbon and silicon atoms incorporated.