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Using AsH3 as the arsenic source in molecular beam epitaxy enables the growth of high-quality GaAs epitaxial layers with exceptionally high electron mobilities, indicating that As1 may be the preferred species for high-purity GaAs growth. Novelty: ClaimNovelty.METHODOLOGICAL. Consensus alignment: ConsensusAlignment.NEUTRAL.

May 1, 1981Applied Physics Letters

On the use of AsH3 in the molecular beam epitaxial growth of GaAs

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ACA. R. CalawaCornell University

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A. R. Calawa (1981) studied this question.

synapsesocial.com/papers/6a095bca00217ed3fb33f2af https://doi.org/10.1063/1.92484

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May 1, 1981Applied Physics Letters

On the use of AsH3 in the molecular beam epitaxial growth of GaAs

View Full Paper

Ask AI

Bookmark

Authors

ACA. R. CalawaCornell University

Discussion

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

A. R. Calawa (1981) studied this question.

synapsesocial.com/papers/6a095bca00217ed3fb33f2af https://doi.org/10.1063/1.92484

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