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We report electrical and optical properties of very high purity GaAs epilayers grown by low-pressure metalorganic chemical vapor deposition using AsH3 and triethylgallium as As and Ga sources. An electron mobility of 335 000 cm2/V s at 38 K has been measured for a 12-μ-thick layer.
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Razeghi et al. (1989) studied this question.
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