We report on a recent development of diluted nitride laser diodes operating at the wavelengths around 1.3 μm. The lasers grown by molecular beam epitaxy and processed into 20-μm-wide ridge waveguide structures, mounted episides up on subcarriers, exhibit a threshold current density as low as 563 A/cm2, slope efficiency of 0.2 W/A per facet, light power up to 40-mW continuous-wave, and characteristic temperature of 97-133 K.
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Peng et al. (2002) studied this question.
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