Low-threshold current, high-efficiency 1.3-μm wavelength aluminum-free InGaAsN-based quantum-well lasers

We demonstrate high-performance Al-free InGaAsN-GaAs-InGaP-based long-wavelength quantum-well (QW) lasers grown on GaAs substrates by gas-source molecular beam epitaxy using a RF plasma nitrogen source. Continuous wave (CW) operation of InGaAsN-GaAs QW lasers is demonstrated at /spl lambda/=1.3 μm at a threshold current density of only J/sub TH/=1.32 kA/cm2. These narrow ridge (W=8.5 μm) lasers also exhibit an internal loss of only 3.1 cm/sup -1/ and an internal efficiency of 60%. Also, a characteristic temperature of T0=150 K from 10/spl deg/C to 60/spl deg/C was measured, representing a significant improvement over conventional /spl lambda/=1.3 μm InGaAsP-InP lasers. Under pulsed operation, a record high maximum operating temperature of 125/spl deg/C and output powers greater than 300 mW (pulsed) and 120 mW (CW) were also achieved.