Low threshold 1.3 μm lasers grown by solid-source molecular beam epitaxy

A threshold current density of 270 A/cm2 has been measured for 2 mm long InAsPGaInAsP broad area lasers grown by solid source molecular beam epitaxy. To date, these are the lowest reported threshold current density 1.3 μm lasers by any type of MBE growth technique. An optimum growth temperature of 465°C was determined for InAsP by maximizing the photoluminescence intensity from a test structure modeled after the laser core, and a room-temperature photoluminescence line width of 18 meV was measured on an actual laser growth.