Low-Threshold 1.3 µm Wavelength, Strained-Layer InGaAsP Multi-Quantum Well Lasers Grown by All Solid Source Molecular Beam Epitaxy

We report the growth, by all solid source molecular beam epitaxy (SSMBE) of low-threshold 1.3 µ m wavelength strained-layer InGaAsP multi-quantum well lasers. A threshold current density of 400 A/cm 2 was achieved for a 1600 µ m long broad-area laser, and a threshold current of 18 mA was measured for a 5×320 µ m as-cleaved ridge waveguide laser. These are the lowest values reported for SSMBE grown material, and the fabricated lasers compare favorably to the best devices grown by other techniques.