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InGaAsP/InGaP double-heterostructure lasers emitting at 810 nm have been fabricated on GaAs substrates using liquid-phase epitaxy (LPE). A threshold current as low as 2.0 kA/cm2 with an external differential quantum efficiency of 54% is obtained. Thus it has been shown that high-quality InGaAsP/InGaP lasers can be obtained by LPE growth.
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Wakao et al. (1984) studied this question.
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