We report the epitaxial relationship of VO2 thin-films on c-plane sapphire and their terahertz transmission modulation with temperature. The films exhibit a triple-domain structure caused by the lattice mismatch between monoclinic VO2 and sapphire hexagon. The epitaxial relationship is determined to be VO2[010]∥Al2O3[0001] and VO2(2¯02)∥Al2O3{112¯0}, with the in-plane lattice mismatch of 2.66% (tensile) along [2¯02] and the out-of-plane lattice mismatch of −2.19% (compressive). Terahertz measurements revealed that VO2 films have over fourfold change in transmission during the metal-insulator transition, indicating a strong potential for terahertz wave switching and modulation applications.
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Chen et al. (2010) studied this question.
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