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May 28, 2004Japanese Journal of Applied PhysicsOpen Access

Al2O3 Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier Layers

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Authors

THTamotsu HashizumeHokkaido UniversitySAS. AnantathanasarnPhranakhon Si Ayutthaya Rajabhat UniversityNNNoboru Negoro

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Hashizume et al. (2004) studied this question.

synapsesocial.com/papers/6a75cc32f1e99ff85ab216c6https://doi.org/10.1143/jjap.43.l777
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