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April 1, 2004Japanese Journal of Applied PhysicsOpen Access

Non-Recessed-Gate Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors with High RF Performance

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Authors

AEAkira EndohYYYoshimi YamashitaKIKeiji Ikeda

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Endoh et al. (2004) studied this question.

synapsesocial.com/papers/6a75cc32f1e99ff85ab216c7https://doi.org/10.1143/jjap.43.2255
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