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December 1, 2003IEEE Transactions on Electron Devices

High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior

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Authors

WSWataru SaitoKyushu UniversityYTYoshiharu TakadaToshiba (Japan)MKMasahiko KuraguchiToshiba (Japan)

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Saito et al. (2003) studied this question.

synapsesocial.com/papers/6a75cc32f1e99ff85ab216c8https://doi.org/10.1109/ted.2003.819248
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